This is where the volt age is negative enough that the. The heart of this device is the mos capacitor, which we will study today. For still higher magnitudes of bias vg mos capacitor. The mos capacitor consists of a metaloxidesemiconductor structure as illustrated by figure 6. Shown is the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate.
On this channel you can get education and knowledge for general issues and topics. To analyze the mos capacitor we will use the same depletion approximation that we introduced in conjunction with pn junctions. Deep depletion the previous discussions pertain to the condition when the gate voltage is ramped slowly, from accumulation condition to depletion and then to inversion condition. Pdf this work reports on an investigation of capacitancevoltage cv measurement of. A second metal layer forms an ohmic contact to the back of the semiconductor and is called the bulk contact. V characterization of mos capacitors using the model 4200.
Regions of operation for mos capacitor with ptype sc. The capacitance depends on the voltage mos capacitor is the series combination of the oxide and the voltage dependent semiconductor capacitances. Structure acts like a parallel plate capacitor piling holes up at the surface. At zero applied volt age, the bending of the energy bands is ideally determined by the difference in the work functions of the metal and the semiconductor.
Depending upon the value of gate voltage applied, the mos capacitor works in. Ee143 f2010 lecture 22 electrical characteristics of mos. Electrical characteristics of mos devices the mos capacitor. Voltage components accumulation, depletion, inversion modes effect of channel bias and substrate bias effect of gate oxide charges thresholdvoltage adjustment by implantation capacitance vs. The electrical characteristics of both n and p type gan metaloxide semiconductor mos capacitors utilizing plasmaenhanced cvdsio2 as the gate dielectric were measured. The mos capacitance can be treated as two capacitances in series, the oxide. This work reports on an investigation of capacitancevoltage cv measurement of metaloxidesemiconductor mos capacitors on high resistivity silicon hrs used as substrate for radiofrequency. The capacitance of a mos structure is voltage dependent since the.